MTP10N10EL Datasheet (Motorola)

MTP10N10EL, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10EL/D ™ Data Sheet Logic Level TMOS E-FET.™ Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high

MTP10N10EL Features

* CAPACITANCE (pF) 1200 1000 800 600 400 200 0 10 VDS = 0 V VGS = 0 V TJ = 25°C Crss Ciss Coss Crss 0 5 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 5 Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data