MTB75N06HD - TMOS POWER FET

Product Overview

Motorola

Part number	MTB75N06HD
Manufacturer	Motorola
File Size	342.06 KB
Description	TMOS POWER FET
Datasheet	MTB75N06HD Datasheet
Additional preview pages of the MTB75N06HD datasheet.

quently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Mos.

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Published: Sep 13, 2005 |