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MRF9060SR1 - N-CHANNEL BROADBAND RF POWER MOSFETs

Download the MRF9060SR1 datasheet PDF. This datasheet also covers the MRF9060R1 variant, as both devices belong to the same n-channel broadband rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T 5 3052 1648 10 Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060R1 MRF9060SR1 4 MOTOROLA RF DEVIC

Features

  • ing Network Device Under Test Output Matching Network Z in Z.
  • OL Figure 9. Series Equivalent Input and Output Impedance MRF9060R1 MRF9060SR1 8.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9060R1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9060LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9060LR1 RF Power Field Effect Transistors NXP
MRF9060LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9060LSR1 RF Power Field Effect Transistors NXP
MRF9060NBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9060S RF Power Field Effect Transistors
MRF9060 RF Power Field Effect Transistors
MRF9060MBR1 RF Power Field Effect Transistors
MRF9060MR1 RF Power Field Effect Transistors
MRF9060R1 N-CHANNEL BROADBAND RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — –31 dBc www.DataSheet4U.
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