MRF1535FNT1 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF1535FNT1, RF Power Field Effect Transistors

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1535T1 Rev.

7, 3/2005 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 12.5 volt mobile FM equipment.

Specified Performance @ 520 MHz,

MRF1535FNT1 Features

* Q = 250 mA Pin = 34 dBm 10 11 12 13 14 15 520 MHz 40 IDQ = 250 mA Pin = 34 dBm 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage Figure 18. Drain Efficiency versus Supply Voltage MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1