MRF151G - RF Power Field-Effect Transistor

MACOM

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Datasheet Details

Part number	MRF151G
Manufacturer	MACOM
File Size	877.96 KB
Description	RF Power Field-Effect Transistor
Datasheet	MRF151G-MACOM.pdf

MRF151G Product details

Description

and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz.The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.Rev.V1 1 M/A-COM Technology Solutions Inc.(MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.Visit www.macom.com for additional data sheets and product informati

Features

Guaranteed Performance at 175 MHz, 50 V:.
Output Power.
300 W.
Gain.
14 dB (16 dB Typ).
Efficiency.
50%.
Low Thermal Resistance.
0.35°C/W.
Ruggedness Tested at Rated Output Power.
Nitride Passivated Die for Enhanced Reliability Package Outline.

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Published: Dec 30, 2024 |