MRF151G Datasheet (MACOM) - RF Power Field-Effect Transistor

MRF151G, RF Power Field-Effect Transistor

and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz.

The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Rev.

V1 1 M/A-COM Technology Solutions

MRF151G Features

* Guaranteed Performance at 175 MHz, 50 V:

* Output Power

* 300 W

* Gain

* 14 dB (16 dB Typ)

* Efficiency

* 50%

* Low Thermal Resistance

* 0.35°C/W

* Ruggedness Tested at Rated Output Power

* Nitride Passivated Die for Enhanced Reliability Packa