MGSF1N02ELT3 Datasheet (Motorola) - N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

MGSF1N02ELT3, N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devices with energy conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry.

Typical applications ar

MGSF1N02ELT3 Features

* 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318

* 08 ISSUE AE SOT

* 23 (TO

* 236AB) STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN Motorola reserves the right to make changes without further notice to any produ