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MGSF1N02LT3 - N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

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  • d Diodes Device Data 5 MGSF1N02LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02LT1/D MGSF1N02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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