Datasheet Details
- Part number
- 4N80E
- Manufacturer
- Motorola
- File Size
- 142.90 KB
- Datasheet
- 4N80E_Motorola.pdf
- Description
- MTB4N80E
4N80E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET .™ High Energy Power FET D 2 PAK-SL Straight L.4N80E Features
* elieved readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces s4N80E Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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