4N80 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 4N80 .
Drain Current ID= 4A@ TC=25℃. Drain Source Voltage- : VDSS= 800V(Min). Fast Switching Speed. Minimum Lot-to-Lot variations for robust.

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Datasheet Specifications

Part number: 4N80
Manufacturer: Inchange Semiconductor
File Size: 235.24 KB
Datasheet: 4N80-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Applications

* Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 15.6 A Ptot Total D

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4N80 N-Channel MOSFET Transistor Inchange Semiconductor

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