2N998 Datasheet (Motorola) - Darlington amplifier containing two NPN silicon annular transistors

2N998, Darlington amplifier containing two NPN silicon annular transistors

2N998 (SILICON) Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, and high-input impedance.

B, CASE 20(8) (TO 72) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCB VE