2N910 Datasheet (Motorola) - NPN silicon annular transistors

2N910, NPN silicon annular transistors

2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.

CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Ran