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2N835 - NPN silicon epitaxial transistors

Download the 2N835 datasheet PDF. This datasheet also covers the 2N834 variant, as both devices belong to the same npn silicon epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N834-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2N80K5 N-channel Power MOSFET STMicroelectronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N834 NPN silicon epitaxial transistors
2N838 PNP germanium epitaxial mesa transistor
2N827 PNP germanium mesa transistor
2N828 PNP germanium epitaxial mesa transistor
2N828A PNP germanium epitaxial mesa transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB Ie PD PD PD TJ,Tstg 2N834 2N835 30 20 40 25 5.0 3.0 200 0.3 2.0 1.0 6.67 0.5 6.67 -65 to +175 Unit Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC Watt mWflC °c FIGURE 1 - TURN·ON AND TURN·OFF TIME MEASUREMENT CIRCUIT FIGURE 2 - CHARGE STORAGE TIME CONSTANT MEASUREMENT CIRCUIT 'Oo .
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