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2N80-C Datasheet 800V NHANNEL POWER MOSFET

Manufacturer: Unisonic Technologies

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General Description

The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TA3-T 2N80G-TA3-T 2N80L-TF3-T 2N80G-TF3-T 2N80L-TF1-T 2N80G-TF1-T 2N80L-TM3-T 2N80G-TM3-T 2N80L-TN3-R 2N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-507.C 2N80-C  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R205-507.C 2N80-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 800 V VGSS ±30 V Drain Current Continuous ID 2 A Pulsed (Note 2) IDM 4 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 102 mJ 3.3 V/ns TO-220 85 W Power Dissipation TO-220F/TO-220F1 PD 25 W TO-251/TO-252 44 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.

Overview

UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER.

Key Features

  • S0.
  • RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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