2N834 Datasheet (Motorola) - NPN silicon epitaxial transistors

2N834, NPN silicon epitaxial transistors

834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications.

CASE 22 (TO 18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbo