2N696 Datasheet (Motorola)

2N696, NPN Transistor

2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.

MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.0 Vdc Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C Operating and Storage Junction Temperature Range TJ' Tstg 0.6 13.3