2N699 Datasheet (Motorola) - NPN silicon annular transistor

2N699, NPN silicon annular transistor

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (5 Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol VCER VCBO Vebo PD PD Tj, Tstg Value 80 120 5.0 0.6 4.0 2.0 13.3 -65 to +200 Unit Vdc Vdc Vdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient