Datasheet4U Logo Datasheet4U.com

2N6275 - High Power NPN SIlicon Transistor

Download the 2N6275 datasheet PDF (2N6274 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high power npn silicon transistor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6274-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • 2N6275 - POWER TRANSISTORS (ON Semiconductor)
  • 2N6275 - Silicon NPN Power Transistor (INCHANGE)
  • 2N6270 - Bipolar NPN Device (Seme LAB)
  • 2N6270 - Silicon Power Transistors (SavantIC)
  • 2N6271 - Silicon Power Transistors (SavantIC)
  • 2N6271 - Bipolar NPN Device (Seme LAB)
  • 2N6274 - POWER TRANSISTORS (ON Semiconductor)
  • 2N6274 - NPN High Power Silicon Transistor (VPT)
  • 2N6274 - Silicon NPN Power Transistor (INCHANGE)
  • 2N6274 - Bipolar NPN Device (Seme LAB)
Other Datasheets by Motorola
  • 2N6274 - High Power NPN SIlicon Transistor
  • 2N6277 - High Power NPN SIlicon Transistor
  • 2N6237 - SIlicon Controlled Rectifiers
  • 2N6238 - SIlicon Controlled Rectifiers
  • 2N6239 - SIlicon Controlled Rectifiers
  • 2N6240 - SIlicon Controlled Rectifiers
  • 2N6241 - SIlicon Controlled Rectifiers
  • 2N6251 - High Voltage NPN Silicon Power Transistors

Full PDF Text Transcription

Click to expand full text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275 VCEO(sus) = 150 Vdc (Min) — 2N6277 • High DC Current Gain — hFE = 30–120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC 20 Adc tr = 0.35 µs (Max) ts = 0.8 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.
Published: |