2N6274 - High Power NPN SIlicon Transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N6274
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	168.66 KB
Description	High Power NPN SIlicon Transistor
Datasheet	2N6274 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N6275	High Power NPN SIlicon Transistor
2N6277	High Power NPN SIlicon Transistor
2N6237	SIlicon Controlled Rectifiers
2N6238	SIlicon Controlled Rectifiers
2N6239	SIlicon Controlled Rectifiers
2N6240	SIlicon Controlled Rectifiers
2N6241	SIlicon Controlled Rectifiers
2N6251	High Voltage NPN Silicon Power Transistors
2N6255	HIGH FREQUENCY TRANSISTOR
2N6256	UHF AMPLIFIER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275 VCEO(sus) = 150 Vdc (Min) — 2N6277 • High DC Current Gain — hFE = 30–120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC 20 Adc tr = 0.35 µs (Max) ts = 0.8 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.