2N3304 Datasheet (Motorola) - PNP silicon annular transistor

2N3304, PNP silicon annular transistor

2N3304 (SILICON) PNP silicon annular transistor designed for lowlevel, high-speed switching applications.

CASE 22 (TO 18) Collector connected to cese MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 1000C Operating & Storage Junction Temperature Range Symbol Value Unit VCEO VCB VEB PD PD TJ, Tstg 6.0 6.0 4.0 300 1.

72 500 5.0 -65 to..200