2N3303 Datasheet (Motorola) - NPN silicon annular transistor

2N3303, NPN silicon annular transistor

2N3303 (SILICON) NPN silicon annular transistor designed for highspeed, high-current switching and driving applications.

CASE 94 Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCB 25 Vdc Emitter-Base Voltage VEB 4.0 Vdc Collector Current-Continuous Total Device Dissipation @ TA =25"C Derate above 25°C Total Device Dissipation @ TC =25°C Derate above 25 °C Operating and Storage Junction Temperature R