2N3248 Datasheet (Motorola) - PNP silicon annular transistors

2N3248, PNP silicon annular transistors

2N3248 (SILICON) 2N3249 CASE 22 (TO 18) PNP silicon annular transistors for low-level, highspeed switching applications.

Collector connected to else MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Device Dissipation @.

25°C Ambient Temperature Derate above 25°C Total Device Dissipation @25°C Case Temperature Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCB VCEO VEB PD PD TJ Tstg Value 15 12 5.0 Unit