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2N3209 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
designed for medium·speed saturated switching applications.
• Low Collector· Emitter Saturation Voltage -
VCE(sat) =0.15 Vdc (Max) @ IC = 10 mAdc
• Low Output Capacitance -
Cob =5.0 pF (Max) @ VCB =5.0 Vdc
• DC Current Gain Specified - 10 mAdc to 100 mAdc
PNPSILICON TRANSISTOR
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@TA = 2SoC
Derate above 2SoC Total Device Dissipation @TC=250C
Derate above 2SoC Operating and Storage Junction
Temperature Range
'"Indicates JEDEC Registerad Data.
Svmbol VCEO VCB VEB
IC
Po
Po
T J,Tstg
Value 20 20 4.0 200 360 2.06 1.2 6.
2N3209 Datasheet
