2N1189 Datasheet (Motorola) - PNPgermanium transistors

2N1189, PNPgermanium transistors

2Nl189 2Nl190(GERMANIUM) CASE31{l) ' (TO 5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.

MAXIMUM RATINGS Rating Collector-Base Voltage Symbol Value Unit VCB 45 Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.67 mW1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resist