2N1120 Datasheet (Motorola) - PNP germanium power transistor

2N1120, PNP germanium power transistor

1120 2N (GERMANIUM) PNP germanium power transistor for military and industrial power applications.

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Emitter Current Total Device Dissipation @ TC = 250 C Derate above 250 C Operating Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCES VCB VEB IE PD TJ 2N1120 40 70 80 40 15 90 1.2 -65 to +100 Unit Vdc Vdc Vd