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S30C150C - Schottky Barrier Rectifiers

S30C150C Description

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal.These state-of-the-art geometry .

S30C150C Features

* epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring

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Datasheet Details

Part number
S30C150C
Manufacturer
Mospec Semiconductor
File Size
37.17 KB
Datasheet
S30C150C-MospecSemiconductor.pdf
Description
Schottky Barrier Rectifiers

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Schottky Barrier Rectifiers Mospec Semiconductor
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