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S30C100C - Schottky Barrier Rectifiers

S30C100C Description

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal.These state-of-the-art geometry .

S30C100C Features

* epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stres

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Datasheet Details

Part number
S30C100C
Manufacturer
Mospec Semiconductor
File Size
52.80 KB
Datasheet
S30C100C-MospecSemiconductor.pdf
Description
Schottky Barrier Rectifiers

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Schottky Barrier Rectifiers Mospec Semiconductor
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