M2V56S30AKT - 256M Synchronous DRAM

Product Overview

Mitsubishi

Datasheet Details

Part number	M2V56S30AKT
Manufacturer	Mitsubishi
File Size	620.06 KB
Description	256M Synchronous DRAM
Datasheet	M2V56S30AKT Datasheet
Additional preview pages of the M2V56S30AKT datasheet.

Product details

Description

M2V56S20AKT is a 4-bank x 16777216-word x 4-bit, M2V56S30AKT is a 4-bank x 8388608-word x 8-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface.

Features

- Single 3.3v±0.3V power supply - Max. Clock frequency -5:PC166 / -6:PC133 / -7:PC100 - Fully Synchronous operation referenced to clock rising edge - Single Data Rate - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/full page (programmable) - Burst type- sequential / interleave (programmable) - Random column access - Auto precharge / All bank precharge controlled by A10 - 8192 refresh cycles /64ms (4 banks co.

📁 Similar Datasheet

Other Datasheets by Mitsubishi

M2V56S30ATP - 256M Synchronous DRAM
M2V56S30TP - 256M Synchronous DRAM
M2V56S20AKT - 256M Synchronous DRAM
M2V56S20ATP - 256M Synchronous DRAM
M2V56S20TP - 256M Synchronous DRAM
M2V56S40AKT - 256M Synchronous DRAM

Published: May 2, 2005 |