RD12MVP1 - Silicon MOSFET Power Transistor

Mitsubishi Electric

Datasheet Details

Part number	RD12MVP1
Manufacturer	Mitsubishi Electric
File Size	150.12 KB
Description	Silicon MOSFET Power Transistor
Datasheet	RD12MVP1_MitsubishiElectric.pdf

RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz.
High Efficiency: 55%min. (175MHz).
No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in VHF band mobile radio sets. SIDE VIEW Standoff = max 0.05.

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Published: Feb 15, 2007 |