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MGF4953B - SUPER LOW NOISE InGaAs

Mitsubishi Electric

The MGF4953B by Mitsubishi Electric is a SUPER LOW NOISE InGaAs. Below is the official datasheet preview.

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MGF4953B SUPER LOW NOISE InGaAs by Mitsubishi Electric - Datasheet Preview — Official preview page of the MGF4953B SUPER LOW NOISE InGaAs datasheet (Mitsubishi Electric).

Datasheet Details

Part number	MGF4953B
Manufacturer	Mitsubishi Electric
File Size	145.16 KB
Description	SUPER LOW NOISE InGaAs
Datasheet	MGF4953B_MitsubishiElectric.pdf
Additional preview pages of the MGF4953B datasheet.

MGF4953B Product details

Description

The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ. ) High associated gain @ f=20GHz Gs = 10.5dB (Typ. ) Fig.1.

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Published: Dec 15, 2006 |