MGF4919G Datasheet (Mitsubishi) - SUPER LOW NOISE InGaAs HEMT

MGF4919G, SUPER LOW NOISE InGaAs HEMT

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.

The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for mic

MGF4919G Features

* Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)

* High associated gain Gs=12.0dB(MIN.) @f=12GHz 2 2 0.5±0.15 3 APPLICATION L to Ku band low noise amplifiers. ø1.8±0.2 QUALITY GRADE

* GG 1 GATE 2 SOURCE RECOMMENDED BIAS CONDITIONS