RD04HMS2 - Silicon MOSFET Power Transistor

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RD04HMS2
Manufacturer	Mitsubishi Electric Semiconductor
File Size	1.26 MB
Description	Silicon MOSFET Power Transistor
Datasheet	RD04HMS2_MitsubishiElectricSemiconductor.pdf

RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications.

1. High Power gain and High Efficiency Pout=5.0Wtyp. , Gp=14dBtyp. Drain Effi. =53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate).

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Published: Nov 5, 2012 |