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MT42C4256 - 256K x 4 VRAM

Features

  • Class B High-Reliability Processing.
  • DRAM: 262144 Words × 4 Bits SAM: 512 Words × 4 Bits.
  • Single 5-V Power Supply (±10% Tolerance).
  • Dual Port Accessibility.
  • Simultaneous and Asynchronous Access From the DRAM and SAM Ports.
  • Bidirectional-Data-Transfer Function Between the DRAM and the Serial-Data Register.
  • 4 × 4 Block-Write Feature for Fast Area Fill Operations; As Many as Four Memory Address Locations Written per Cycle From an On-Chip.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VRAM SMJ44C251B MT42C4256 256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89497 • MIL-STD-883 FEATURES • Class B High-Reliability Processing • DRAM: 262144 Words × 4 Bits SAM: 512 Words × 4 Bits • Single 5-V Power Supply (±10% Tolerance) • Dual Port Accessibility–Simultaneous and Asynchronous Access From the DRAM and SAM Ports • Bidirectional-Data-Transfer Function Between the DRAM and the Serial-Data Register • 4 × 4 Block-Write Feature for Fast Area Fill Operations; As Many as Four Memory Address Locations Written per Cycle From an On-Chip Color Register • Write-Per-Bit Feature for Selective Write to Each RAM I/O; Two Write-Per-Bit Modes to Simplify System Design • Enhanced Page-Mode Operation for Faster Access • CAS-Before-RAS (CBR) and Hi
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