MT42C4256 - 256K x 4 VRAM

Micross

Datasheet Details

Class B High-Reliability Processing.
DRAM: 262144 Words × 4 Bits SAM: 512 Words × 4 Bits.
Single 5-V Power Supply (±10% Tolerance).
Dual Port Accessibility.
Simultaneous and Asynchronous Access From the DRAM and SAM Ports.
Bidirectional-Data-Transfer Function Between the DRAM and the Serial-Data Register.
4 × 4 Block-Write Feature for Fast Area Fill Operations; As Many as Four Memory Address Locations Written per Cycle From an On-Chip.

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Published: Oct 12, 2018 |