MRF555 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi

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Datasheet Details

Part number	MRF555
Manufacturer	Microsemi
File Size	168.59 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	MRF555-Microsemi.pdf

MRF555 Product details

Description

Designed primarily for wideband large signal stages in the UHF frequency range.MRF555 Power Macro ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC MSC1316.PDF 10-25-99 Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA 3.0 Watts 40 mW/ ºC MRF555 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol T

Features

Specified @ 12.5 V, 470 MHz Characteristics.
Output Power = 1.5 W.
Minimum Gain = 11 dB.
Efficiency 60% (Typ).
Cost Effective PowerMacro Package.
Electroless Tin Plated Leads for Improved Solderability.

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Published: Jul 1, 2016 |