2N7370 Datasheet (Microsemi) - NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

2N7370, NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices 2N7370 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.667 W/0C above TC > +250C Symbol VCEO VCBO V