2N7371 Datasheet (Microsemi Corporation) - PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

2N7371, PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC Value 100 100 5.0 0.2 12 100 -65 to +175 Max.

1.5 Units Vdc Vdc Vdc Adc Adc W 0 www.DataS