MSAGX60F60A_MicrosemiCorporation.pdf
Datasheet Details
Part number:
MSAHX60F60A, MSAGX60F60A
Manufacturer:
Microsemi ↗ Corporation
File Size:
69.24 KB
Description:
N-channel insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: MSAHX60F60A, MSAGX60F60A.
Please refer to the document for exact specifications by model.
MSAHX60F60A, MSAGX60F60A, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC MAX.
600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W C
MSAHX60F60A Features
* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re
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