MSAGA11F120D Datasheet (Microsemi Corporation)

MSAGA11F120D, Fast IGBT Die

* * * N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.

* Collector/Gate Metallization: Ti * Ni (1 um) * Ag (0.2 um) for

MSAGA11F120D Features

* Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated

* Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 1