Datasheet Details
| Part number | MSAGZ52F120A |
|---|---|
| Manufacturer | Microsemi (Microchip) |
| File Size | 69.99 KB |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 MSAGZ52F120A Datasheet
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Description
MAX.
Features
- Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) Maximum Ratings @ 25° C (unless otherwise specified).