MRF904 Datasheet (Microsemi Corporation) - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF904, RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed primarily for use IN High Gain, low noise general purpose amplifiers.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D

MRF904 Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2

* High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collecto