Datasheet Specifications
- Part number
- APTGT200DH60G
- Manufacturer
- Microsemi ↗ Corporation
- File Size
- 282.75 KB
- Datasheet
- APTGT200DH60G_MicrosemiCorporation.pdf
- Description
- Asymmetrical - Bridge Trench Field Stop IGBT Power Module
Description
APTGT200DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Appli.
Features
* Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA ratedAPTGT200DH60G Distributors
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