Datasheet Specifications
- Part number
- APTGT200DH120G
- Manufacturer
- Microsemi ↗ Corporation
- File Size
- 283.51 KB
- Datasheet
- APTGT200DH120G_MicrosemiCorporation.pdf
- Description
- Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module
Description
APTGT200DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 200A @ Tc = 80°.
Features
* Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA ratedAPTGT200DH120G Distributors
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