Datasheet4U.com

MT49H64M9, MT49H16M36 - 576Mb CIO Reduced Latency

Micron

The MT49H64M9 by Micron is a 576Mb CIO Reduced Latency. Below is the official datasheet preview.

📥 Download Datasheet

MT49H64M9 576Mb CIO Reduced Latency by Micron - Datasheet Preview — Official preview page of the MT49H64M9 576Mb CIO Reduced Latency datasheet (Micron).

Datasheet Details

Part number	MT49H64M9, MT49H16M36
Manufacturer	Micron
File Size	1.43 MB
Description	576Mb CIO Reduced Latency
Datasheet	MT49H16M36-Micron.pdf
Note	This datasheet PDF includes multiple part numbers: MT49H64M9, MT49H16M36. Please refer to the document for exact specifications by model.
Additional preview pages of the MT49H64M9 datasheet.

MT49H64M9 Product details

Features

CIO RLDRAM 2 MT49H64M9.
64 Meg x 9 x 8 Banks MT49H32M18.
32 Meg x 18 x 8 Banks MT49H16M36.
16 Meg x 36 x 8 Banks Features.
533 MHz DDR operation (1.067 Gb/s/pin data rate).
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
Organization.
64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O.
8 banks.
Reduced cycle time (15ns at 533 MHz).
Nonmultiplexed addresses (address multiplexing option available).

📁 MT49H64M9 Similar Datasheet

MT49H16M18 - 16 Meg x 18 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H16M18C - SIO RLDRAM 2 (Micron Technology)
MT49H32M9 - 32 Meg x 9 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H8M36 - 8 Meg x 36 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT4903 - P-Channel MOSFET (MT Semiconductor)
MT4914 - Dual N-Channel Power MOSFET (MOS-TECH)
MT4936 - N-Channel Power MOSFET (MOS-TECH)
MT4946 - N-Channel Power MOSFET (MOS-TECH)

Other Datasheets by Micron

MT49H16M16 - 2 Meg x 16 x 8 Banks Reduced Latency DRAM
MT49H16M36 - 576Mb CIO Reduced Latency
MT49H32M18 - 576Mb CIO Reduced Latency
MT49H8M32 - 1 Meg x 32 x 8 Banks Reduced Latency DRAM
MT4067-P - 256K x 1 DRAM
MT40A1G16 - 1.2V DDR4 SDRAM

Published: Dec 7, 2017 |