MT54W4MH8B - SRAM 2-WORD BURST

Micron Technology

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Datasheet Details

Part number	MT54W4MH8B
Manufacturer	Micron Technology
File Size	567.42 KB
Description	SRAM 2-WORD BURST
Datasheet	MT54W4MH8B_MicronTechnology.pdf

MT54W4MH8B Product details

Description

4 Meg x 8, QDRIIb2 FBGA 4 Meg x 9, QDRIIb2 FBGA 2 Meg x 18, QDRIIb2 FBGA 1 Meg x 36, QDRIIb2 FBGA OPTIONS Clock Cycle Timing 4ns (250 MHz) 5ns (200 MHz) 6ns (167 MHz) 7.5ns (133 MHz) Configurations 4 Meg x 8 4 Meg x 9 2 Meg x 18 1 Meg x 36 Package 165-ball, 15mm x 17mm FBGA NOTE: MARKING1 -4 -5 -6 -7.5 MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B F 1. A Part Marking Guide for the FBGA devices can be found on Micron’s Web site http://www.micron.com/numbe

Features

DLL circuitry for accurate output data placement MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B Figure 1 165-Ball FBGA.
Separate independent read and write data ports with concurrent transactions.
100 percent bus utilization DDR READ and WRITE operation.
Fast clock to valid data times.
Full data coherency, providing most current data.
Two-tick burst counter for low DDR transaction size.
Double data rate operation on read and write.

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Published: Mar 8, 2010 |