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MT4LC4M16N3 - DRAM

Product Overview

Micron Technology

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MT4LC4M16N3 DRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT4LC4M16N3

Datasheet Details

Part number	MT4LC4M16N3
Manufacturer	Micron Technology
File Size	474.53 KB
Description	DRAM
Datasheet	MT4LC4M16N3 Datasheet
Note	This datasheet PDF includes multiple part numbers: MT4LC4M16N3, MT4LC4M16R6. Please refer to the document for exact specifications by model.
Additional preview pages of the MT4LC4M16N3 datasheet.

Product details

Description

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

Features

Single +3.3V ±0.3V power supply.
Industry-standard x16 pinout, timing, functions, and package.
12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3).
High-performance CMOS silicon-gate process.
All inputs, outputs and clocks are LVTTL-compatible.
Extended Data-Out (EDO) PAGE MODE access.
4,096-cycle CAS#-BEFORE-RAS# (CBR).

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Other Datasheets by Micron Technology

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Published: Jan 16, 2006 |