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MT4LC16M4G3 - DRAM

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Micron Technology

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MT4LC16M4G3 DRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT4LC16M4G3

Datasheet Details

Part number	MT4LC16M4G3
Manufacturer	Micron Technology
File Size	386.19 KB
Description	DRAM
Datasheet	MT4LC16M4G3 Datasheet
Additional preview pages of the MT4LC16M4G3 datasheet.

Product details

Description

The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

Features

Single +3.3V ±0.3V power supply.
Industry-standard x4 pinout, timing, functions, and packages.
12 row, 12 column addresses (H9) or 13 row, 11 column addresses (G3).
High-performance CMOS silicon-gate process.
All inputs, outputs and clocks are LVTTL-compatible.
Extended Data-Out (EDO) PAGE MODE access.
Optional self refresh (S) for low-power data retention.
4,096-cycle CAS#-BEFORE-RAS# (CBR).

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Published: Jan 16, 2006 |