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MT4LC16M4G3 - DRAM

Micron Technology

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Datasheet Details

Part number	MT4LC16M4G3
Manufacturer	Micron Technology
File Size	386.19 KB
Description	DRAM
Datasheet	MT4LC16M4G3_MicronTechnology.pdf

MT4LC16M4G3 Product details

Description

The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

Features

Single +3.3V ±0.3V power supply.
Industry-standard x4 pinout, timing, functions, and packages.
12 row, 12 column addresses (H9) or 13 row, 11 column addresses (G3).
High-performance CMOS silicon-gate process.
All inputs, outputs and clocks are LVTTL-compatible.
Extended Data-Out (EDO) PAGE MODE access.
Optional self refresh (S) for low-power data retention.
4,096-cycle CAS#-BEFORE-RAS# (CBR).

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Published: Jan 16, 2006 |