Description
of signal connections and die configurations for each respective architecture.
40°C to +85°C) AT = Automotive (
40°C to +105°C)
Operating Voltage
H = 1.8/1.8V
Configuration
128 Meg x 16 64 Meg x 32 128 Meg x 32 256 Meg x 32
Power
Blank = Sta
Features
- Mobile Low-Power DDR SDRAM
MT46H128M16LF.
- 32 Meg x 16 x 4 Banks MT46H64M32LF.
- 16 Meg x 32 x 4 Banks MT46H128M32L2.
- 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4.
- 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4.
- 32 Meg x 16 x 4 Banks x 4 Features.
- VDD/VDDQ = 1.70.
- 1.95V.
- Bidirectional data strobe per byte of data (DQS).
- Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
- Differential.