MT28F322D20 Datasheet PDF (FLASH MEMORY) | Download Micron Technology MT28F322D20

MT28F322D20 - FLASH MEMORY

Download the MT28F322D20 datasheet PDF (MT28F322D18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for flash memory.

Description

Table.

See page 43 for mechanical drawing.

Timing 70ns access 80ns access Frequency 54 MHz 40 MHz No burst operation Boot Block Configuration Top Bottom Package 58-ball FBGA (8 x 7 ball grid) Operating Temperature Range Extended (-40ºC to +8

Features

Flexible dual-bank architecture.
Support for true concurrent operation with zero latency.
Read bank a during program bank b and vice versa.
Read bank a during erase bank b and vice versa.
Basic configuration: Seventy-one erasable blocks.
Bank a (8Mb for data storage).
Bank b (24Mb for program storage).
VCC, VCCQ, VPP voltages.
1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only).
1.80V VCC, VCCQ (MIN); 2.

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MT28F322D20 flash memory by Micron Technology - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MT28F322D18_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MT28F322D20
Manufacturer	Micron Technology
File Size	543.57 KB
Description	FLASH MEMORY
Datasheet	MT28F322D20 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa • Basic configuration: Seventy-one erasable blocks – Bank a (8Mb for data storage) – Bank b (24Mb for program storage) • VCC, VCCQ, VPP voltages – 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only) – 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V VCCQ (MAX) (MT28F322D20 only) – 0.9V (TYP) VPP (in-system PROGRAM/ERASE) – 12V ±5% (HV) VPP tolerant (factory programming compatibility) • Random access time: 70ns/80ns @ 1.

Published: Feb 7, 2007 |