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MT28F002B3 - FLASH MEMORY

Download the MT28F002B3 datasheet PDF. This datasheet also includes the MT28F200B3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MT28F200B3_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

General Description

• Byte-wide READ and WRITE only The MT28F002B3 (x8) and MT28F200B3 (x16/x8) (MT28F002B3, 256K x 8) are nonvolatile, electrically block-erasable (flash), pro• TSOP and SOP packaging options grammable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 OPTIONS MARKING bytes (8 bits).

Writing or erasing the device is done with • Timing either a 3.3V or 5V VPP voltage, while all operations are 90ns access -9 performed with a 3.3V VCC.

Due to process technology 100ns access -10 ET advances, 5V VPP is optimal for application and produc• Configurations tion programming.

Overview

www.DataSheet4U.com 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Smart 3 technology (B3): 3.3V ± 0.3V VCC 3.3V ± 0.3V VPP application programming 5V ±10% VPP application/production programming 44-Pin SOP 12V ± 5% VPP compatibility production programming • Address access times: 90ns, 100ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible ee DataSh • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence DataSheet4U.

Key Features

  • 1 Micron Technology, Inc. , reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. DataSheet 4 U . com www. DataSheet4U. com 2Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN.

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