MT28F160C3 Datasheet (Micron Technology)

MT28F160C3, FLASH MEMORY

Table.

See last page for mechanical drawing.

MT28F160C3FD-11 TET has an I/O supply of 2.7V (MIN).

Programming in production is accomplished by using high voltage which can be supplied on a separate line.

The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write stat

MT28F160C3 Features

* MT28F160C3 Low Voltage, Extended Temperature

* Thirty-nine erase blocks: BALL ASSIGNMENT (Top View) Eight 4K-word parameter blocks 46-Ball FBGA Thirty-one 32K-word main memory blocks

* VCC, VCCQ and VPP voltages: 1 2 3 4 5 6 7 8 2.7V

* 3.3V VCC 2.7V

* 3.3V VCCQ

* A4